Structural characterization of nitride and oxide films grown by pulsed laser deposition technique

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Structural characterization of nitride and oxide films grown by pulsed laser deposition technique

 

Author: Ng, Kam-pui
Title: Structural characterization of nitride and oxide films grown by pulsed laser deposition technique
Degree: M.Sc.
Year: 2001
Subject: Thin films
Pulsed laser deposition
Hong Kong Polytechnic University -- Dissertations
Department: Multi-disciplinary Studies
Dept. of Applied Physics
Pages: ii, 56 leaves : ill. ; 30 cm
Language: English
InnoPac Record: http://library.polyu.edu.hk/record=b1578453
URI: http://theses.lib.polyu.edu.hk/handle/200/1169
Abstract: It is well known that high quality crystalline high Tc superconductor, YBCO, can be fabricated by pulsed laser deposition. However, direct growth of it onto silicon substrate with its desirable properties being preserved seems very difficult. Hence, there comes the intermediate buffering or template systems that grow between the oxide superconductor and its silicon substrate to circumvent the issue. Different multi-buffering layers have been used to facilitate the deposition. In the present studies, two sets of such buffering layers have been tried out. One set consists of Titanium Nitride (TiN) and Strontium Titanate, SrTiO3 (STO), while another uses Titanium Nitride (TiN) and Magnesium Oxide (MgO). Two heterostructures, STO/TiN/Si and MgO/TiN/Si, have been constructed. Their crystalline quality are found to be susceptible to the deposition temperature. At high deposition temperature above 600 C, both sets of buffering layers are heterepitaxially grown on silicon substrate. However, growing high Tc superconductor and ferroelectric oxides on top of them means testing their tolerance over severe conditions. MgO/TiN/Si heterostructure, in this respect, has shown to be superior to the STO/TiN/Si.

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