Evaluation of TiN films grown by pulsed laser deposition method

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Evaluation of TiN films grown by pulsed laser deposition method


Author: Yip, Wing-sum
Title: Evaluation of TiN films grown by pulsed laser deposition method
Degree: M.Sc.
Year: 1998
Subject: Thin films
Pulsed laser deposition
Hong Kong Polytechnic University -- Dissertations
Department: Multi-disciplinary Studies
Dept. of Applied Physics
Pages: iv, 88 leaves : ill. ; 30 cm
Language: English
InnoPac Record: http://library.polyu.edu.hk/record=b1425875
URI: http://theses.lib.polyu.edu.hk/handle/200/1638
Abstract: Pulsed Laser Deposition (PLD) has been demonstrated to be a powerful deposition technique for thin film deposition and Titanium Nitride (TiN) film is a technological attractive material because of its unique characteristics such as good electrical inertness, good electrical properties. In the present studies, TiN films were deposited by ablating a Titanium metal target with Nitrogen as processing gas and by directly ablating a TiN ceramic target. The TiN film deposited by the PLD method was characterized by corrosion resistance tests and visual observations. The results showed that the films were good for hard protective coating as well as attractive decorative coatings. The electrical resistivity of the TiN film of 15u峏-cm make it a good material for ohmic contact with Si. XRD analysis revealed that the deposition temperature and vacuum played an important rote on deposition of crystalline TiN film. Epitaxial TiN film on Si can be obtained at 700C with vacuum of 10-6 Torr. The FWHM of the rocking curve of the film was 1.42o implying that the deposited film is highly oriented. Also the - scan of the film showed that the film was lattice matched and cube on cube grown on Si substrate. Combining the good diffusion barrier properties and the epitaxial quality, the TiN film is a good buffer layer and template for the growth of high quality perovskite type oxide films such as Strontium Titanium Oxide (STO) on Si. XRD analysis of the STO/TiN/Si film showed that good crystalline film can be obtained at 700C with vacuum of 10-6 Torr. The high dielectric constant or ferroelectric properties of many perovskite oxides can thus be utilized in Si based integrated device applications.

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