Modelling of amorphous silicon thin film transistors

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Modelling of amorphous silicon thin film transistors

 

Author: Sze, Siu-hung
Title: Modelling of amorphous silicon thin film transistors
Degree: M.Sc.
Year: 1998
Subject: Thin film transistors
Silicon
Hong Kong Polytechnic University -- Dissertations
Department: Multi-disciplinary Studies
Pages: 66, [5] leaves : ill. ; 30 cm
Language: English
InnoPac Record: http://library.polyu.edu.hk/record=b1421140
URI: http://theses.lib.polyu.edu.hk/handle/200/2811
Abstract: Hydrogenated Amorphous Silicon is a semiconductor with an energy gap close to 1.7eV and electron and hole mobilities on the order of 5-10 cm2/v-s. The device characteristics of amorphous silicon Thin Film Transistor (TFT) strongly depend on the density of the localized states (DOS). These states may vary depending on the deposition conditions, material quality and the history of bias and/ or thermal stress for a given model. For the wide application of the TFT in active matrix display, a simple and accurate analytical model for circuit simulation development is needed. In this project, I have developed analytical amorphous silicon TFT models for the current-voltage and capacitance-voltage characteristics.

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