Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Multi-disciplinary Studies | en_US |
| dc.creator | Sze, Siu-hung | - |
| dc.identifier.uri | https://theses.lib.polyu.edu.hk/handle/200/2811 | - |
| dc.language | English | en_US |
| dc.publisher | Hong Kong Polytechnic University | - |
| dc.rights | All rights reserved | en_US |
| dc.title | Modelling of amorphous silicon thin film transistors | en_US |
| dcterms.abstract | Hydrogenated Amorphous Silicon is a semiconductor with an energy gap close to 1.7eV and electron and hole mobilities on the order of 5-10 cm2/v-s. The device characteristics of amorphous silicon Thin Film Transistor (TFT) strongly depend on the density of the localized states (DOS). These states may vary depending on the deposition conditions, material quality and the history of bias and/ or thermal stress for a given model. For the wide application of the TFT in active matrix display, a simple and accurate analytical model for circuit simulation development is needed. In this project, I have developed analytical amorphous silicon TFT models for the current-voltage and capacitance-voltage characteristics. | en_US |
| dcterms.extent | 66, [5] leaves : ill. ; 30 cm | en_US |
| dcterms.isPartOf | PolyU Electronic Theses | en_US |
| dcterms.issued | 1998 | en_US |
| dcterms.educationalLevel | All Master | en_US |
| dcterms.educationalLevel | M.Sc. | en_US |
| dcterms.LCSH | Thin film transistors | en_US |
| dcterms.LCSH | Silicon | en_US |
| dcterms.LCSH | Hong Kong Polytechnic University -- Dissertations | en_US |
| dcterms.accessRights | restricted access | en_US |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| b14211403.pdf | For All Users (off-campus access for PolyU Staff & Students only) | 2.54 MB | Adobe PDF | View/Open |
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