Carbon implanted titanium nitride film

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Carbon implanted titanium nitride film

 

Author: Chan, Wai-keung
Title: Carbon implanted titanium nitride film
Degree: M.Sc.
Year: 1998
Subject: Thin films
Protective coatings
Coating processes
Thin films -- Surfaces
Surface chemistry
Hong Kong Polytechnic University -- Dissertations
Department: Multi-disciplinary Studies
Dept. of Applied Physics
Pages: viii, [85] leaves : ill. ; 31 cm
Language: English
InnoPac Record: http://library.polyu.edu.hk/record=b1428563
URI: http://theses.lib.polyu.edu.hk/handle/200/3874
Abstract: Ternary materials consisting of titanium, carbon and nitrogen were prepared by implanting carbon into TiN film coated on stainless steel substrate. A MEtal Vapor Vacuum Arc (MEVVA) was used for carbon ion implantation. Some selected samples were annealed. The structure of the C-implanted TiN films was then analyzed using X-ray diffractometer (XRD), optical microscopy and X-ray photoelectron spectrum (XPS). Pulsed carbon ion beam implantation generated cracks on the sample surface, especially for those received high dosage implantation. It was suggested that rapid heating and cooling occur during implantation, which induce thermal shock leading to different thermal expansion between TiN film and stainless steel substrate. The cracks were thus produced. The sample surface becomes rough if higher dosage of carbon implanted. Even after annealing at 400 C, the cracks cannot be removed, and the film surface remains rough. However, fewer cracks are formed, and smoother surface can be achieved if pulsed carbon ion beam with smaller beam current and lower frequency was used during implantation. XRD results indicated that new phases of Ti-C-N may be formed by high beam current implantation. XPS results indicated that graphite structure, and possibly diamondlike structure were formed by high dosage carbon implantation. Ti-N and Ti-C phases coexisted in the solid, and were about stoichiometric. The existence of a C-N phase was also evident. The C-N phase was found to contain less than 33 at. % nitrogen, below the level required to form the hypothetical 帣-C3N4 phase.

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