Single particle Monte Carlo simulation of carrier motion in semiconductor

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Single particle Monte Carlo simulation of carrier motion in semiconductor

 

Author: Tang, Tim
Title: Single particle Monte Carlo simulation of carrier motion in semiconductor
Degree: M.Sc.
Year: 2000
Subject: Semiconductors
Monte Carlo method
Hong Kong Polytechnic University -- Dissertations
Department: Multi-disciplinary Studies
Dept. of Applied Physics
Pages: ii, 1, 35, [10] leaves : ill. ; 30 cm
Language: English
InnoPac Record: http://library.polyu.edu.hk/record=b1540666
URI: http://theses.lib.polyu.edu.hk/handle/200/77
Abstract: This work intends to simulate the transport of an electron in semiconductor using Monte Carlo Method. The Monte Carlo Method is a probabilistic approach bases on sampling of random numbers. This method was first used in the modeling of semiconductors in 1960's. Later on, it has been applied to a wide variety of semiconductor problems including energy distribution, valley population, electron velocity and energy, etc. With this Single Particle Monte Carlo Simulation method, the transport process is simulated by one electron at microscopic level according to the semi - classical picture of carrier transport. The motion of carrier is treated as a sequence of free flights in the electric fields followed by scattering events ( collisions ). The drift time, the type of scattering processes, and the final state are random quantities. However, the free flight is a deterministic process and determined by the initial conditions and electric field strength. The above scattering processes are repeated until the simulation is sufficiently long for steady state phenomena. It was found that at low electric field, the mobility of the electron is increasing. On the other, at high electric field the mobility decreases, and the drift velocity is finally saturated. This simulation result qualitatively agree with experiments in Gallium Arsenide.

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