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dc.contributorDepartment of Applied Physicsen_US
dc.contributor.advisorLeung, Chi Wah (AP)en_US
dc.creatorLi, Peigen-
dc.identifier.urihttps://theses.lib.polyu.edu.hk/handle/200/13694-
dc.languageEnglishen_US
dc.publisherHong Kong Polytechnic Universityen_US
dc.rightsAll rights reserveden_US
dc.titleBulk and interfacial nature of spin hall magnetotransport with iron garnet heterostructuresen_US
dcterms.abstractArtificial intelligence technologies have put forward more stringent requirements for information storage devices. Compared with electronic devices made of traditional semiconductor materials, spintronic devices have advantages such as low energy dissipation and fast writing and reading of data. Taking the device composed of magnetic insulator (MI) and heavy metal (HM) as an example. Due to the low damping of MI and its ability to transmit spin information through magnon, combined with the spin orbit coupling effect of MI/HM, high energy efficiency can be achieved with extremely low Ohmic losses. Therefore, such devices are expected to be widely adopted in the next-generation storage devices.en_US
dcterms.abstractThe spin transport mechanism of MI/HM systems is complicated, especially for heterostructure composed of platinum (Pt) and ferrimagnetic rare earth iron garnet (REIG) with compensation phenomenon, which leads to anomalous spin magnetotransport behavior and has attracted much attention. This thesis is based on the study of magnetic and electrical properties of the Tb3Fe5O12 (TbIG)/Pt systems, including the magnetization compensation behavior, the presence of two sign cross-over points in anomalous Hall effect resistance (RAHE) vs. temperature plot, the impact of REIG/HM interface and REIG bulk on spin magnetotransport. Specifically, the content is organized as follows:en_US
dcterms.abstractThe first part introduces the influence of ultra-thin garnet-like spacers (Y3Al5O12 (YAG) and Gd3Ga5O12 (GGG)) on the spin magnetotransport of TbIG/Pt system. Hall devices are fabricated by pulsed laser deposition (PLD), magnetron sputtering (MS), and photolithography, and the influence of different spacer thicknesses on magnetic proximity effect (MPE) and spin Hall transport are studied.en_US
dcterms.abstractThen, I construct a bilayer REIG system composed of TbIG and Eu3Fe5O12 (EuIG). A thickness-dependent compensation temperature (Tcomp) is realized by changing the thickness of EuIG. The exchange coupling between TbIG and EuIG is analyzed, and the effect on two RAHE sign cross-over points is systematically presented.en_US
dcterms.abstractFinally, I introduce the REIG bulk effect on spin transport, by investigating a REIG sandwich structure based on TbIG and EuIG. It is realized through modulating the individual layer thickness of TbIG/EuIG/TbIG/Pt with fixed total thickness. As TbIG gradually moves away from the Pt, the different contributions of REIG/Pt interface and REIG bulk on two RAHE cross-over points are discussed.en_US
dcterms.extentxv, 155 pages : color illustrationsen_US
dcterms.isPartOfPolyU Electronic Thesesen_US
dcterms.issued2025en_US
dcterms.educationalLevelPh.D.en_US
dcterms.educationalLevelAll Doctorateen_US
dcterms.LCSHSpintronics -- Materialsen_US
dcterms.LCSHMagnetic materialsen_US
dcterms.LCSHHeavy metalsen_US
dcterms.LCSHHong Kong Polytechnic University -- Dissertationsen_US
dcterms.accessRightsopen accessen_US

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Please use this identifier to cite or link to this item: https://theses.lib.polyu.edu.hk/handle/200/13694