Author: Lee, Wai-sim
Title: Pulsed laser deposition of multilayer thin films
Degree: M.Sc.
Year: 2000
Subject: Thin films
Pulsed laser deposition
Hong Kong Polytechnic University -- Dissertations
Department: Multi-disciplinary Studies
Department of Applied Physics
Pages: v, 68 leaves : ill. (some col.) ; 30 cm
Language: English
Abstract: Titanium nitride (TiN) films and heterostructures of MgO/TiN and (Pb(Zr0.52Ti0.48)O3)PZT/MgO/TiN have been grown on silicon (Si) substrate by pulsed laser deposition (PLD) method. The structural properties of the films and heterostructures were characterized by X-ray diffraction (XRD) operated in O-2O, w scan rocking curve and 360o-f scan modes. It has been shown that epitaxially grown TiN films on Si are obtained at substrate temperatures greater than 550C and under high vacuum of 10-6 torr. Highly oriented and cube-on-cube growth are demonstrated by the 1.7o FWHM of the XRD w-rocking curve and the f scan profile respectively. Magnesium Oxide (MgO) of rock salt structure has also been grown on the TiN buffered Si substrate. Epitaxial MgO films are obtained at deposition temperature of 640C and vacuum of 10-6 torr. The heteroepitaxial structure of MgO/TiN/Si has been used as the film growth platform for ferroelectric Pb(Zr0.52Ti0.48)O3(PZT). Due to the close lattice matching between PZT and MgO as well as the high crystalline quality of the epitaxially grown MgO layer, PZT films with excellent structural properties have been fabricated. Epitaxial PZT layers are observed at growth temperature of 600C and under 200 m Torr oxygen ambient. The work presented in this dissertation has demonstrated that high quality ferroelectric perovskite oxides such as PZT can be fabricated on Si semiconductor substrate by buffer layers. The heterostructure MgO/TiN has been shown to be an excellent buffer stack in this respect. The success of our film growth technique has help to resolve some processing problems on integrating ceramic thin films onto semiconductors for devices development.
Rights: All rights reserved
Access: restricted access

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