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dc.contributorMulti-disciplinary Studiesen_US
dc.contributorDepartment of Applied Physicsen_US
dc.creatorChan, Hon-kit Robin-
dc.identifier.urihttps://theses.lib.polyu.edu.hk/handle/200/4526-
dc.languageEnglishen_US
dc.publisherHong Kong Polytechnic University-
dc.rightsAll rights reserveden_US
dc.titleFabrication of nitride and oxide films using pulsed laser deposition techniqueen_US
dcterms.abstractHigh quality crystalline YBCO thin films have been fabricated by pulsed laser deposition method. Single phase and multi phases of YBCO films grown on silicon substrates have been obtained. Different multi-buffering layers have been used for facilitating the deposition of YBCO onto the Si substrate. Total two sets of buffering layers have been used. One set consists of Titanium Nitride (TiN) and Strontuim Titanium Oxide, SrTiO3 (STO) while another set consists of Titanium Nitride (TiN) and Magnesium Oxide (MgO). Based on these buffering layers, two different configurations of heterostructures have been obtained namely the YBCO/STO/TiN/Si and YBCO/MgO/TiN/Si. Both of them are found to behave differently at different deposition condition. At high deposition temperature (720) of TiN, single phase of YBCO are found to be deposited on both heterostructures, but when TiN was deposited at low temperature (580), it favored two phases of YBCO to be deposited on the heterostructure of YBCO/STO/TiN/Si. However, there is only one phase found at another heterostructure YBCO /MgO/TiN/Si.en_US
dcterms.extentv, 70 leaves : ill. ; 30 cmen_US
dcterms.isPartOfPolyU Electronic Thesesen_US
dcterms.issued2000en_US
dcterms.educationalLevelAll Masteren_US
dcterms.educationalLevelM.Sc.en_US
dcterms.LCSHThin filmsen_US
dcterms.LCSHPulsed laser depositionen_US
dcterms.LCSHHong Kong Polytechnic University -- Dissertationsen_US
dcterms.accessRightsrestricted accessen_US

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Please use this identifier to cite or link to this item: https://theses.lib.polyu.edu.hk/handle/200/4526