Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Multi-disciplinary Studies | en_US |
| dc.contributor | Department of Electronic Engineering | en_US |
| dc.creator | Fung, Lai-wah | - |
| dc.identifier.uri | https://theses.lib.polyu.edu.hk/handle/200/98 | - |
| dc.language | English | en_US |
| dc.publisher | Hong Kong Polytechnic University | - |
| dc.rights | All rights reserved | en_US |
| dc.title | Numerical simulation of thin film transistors | en_US |
| dcterms.abstract | Thin-film transistors (TFTs) have emerged as key elements for large scale matrix displays for both Liquid Crystal Displays and Electroluminience Displays. Amorphous TFTs have been developed first, and the technology is now mature enough to be implemented in most commercial applications. But polysilicon TFTs are also receiving great attention because of their high current-drive-capability. It is necessary to have detailed understanding of the TFT current characteristics in order to evaluate its application in display systems, and develop a device model for design of TFT circuits. The static transistor characteristics are determined by the localized electronic states that occur in the bandgap. The localized states are divided into deep and tail states. The deep states, mostly consisting of Si dangling bonds, determine the threshold voltage and the tail states determine the field effect mobility. This dissertation is on the development of a two-dimensional numerical simulation program for TFTs. Both amorphous silicon and polysilicon thin-film transistors can be modelled whereby the defects and grain boundaries in the material are treated as a spatially uniform density of localized states in the bandgap. The fundamental semiconductor equations such as Poisson's and Current Continuity Equation are solved by numerical methods based on Stone's strongly implicit method. The program is used to derive the electric charge, potential and the drain current at various drain voltages and gate voltages. In the simulation of TFTs, it is usually desirable to obtain accurate results at low calculation costs. However, it is difficult to be satisfied since it needs a large number of grid points for the numerical solution of governing equations. Since the adaptive grid generation method is known to be effective in dealing with a trade-off problem of this kind, in this dissertation, an adaptive grid generation algorithm had been introduced. Finally, the validity of the simulation program is shown by the comparison of the two-dimensional numerical simulation results of TFTs with experimental data reported in other papers. | en_US |
| dcterms.extent | vi, 90 leaves : ill. ; 30 cm | en_US |
| dcterms.isPartOf | PolyU Electronic Theses | en_US |
| dcterms.issued | 1998 | en_US |
| dcterms.educationalLevel | All Master | en_US |
| dcterms.educationalLevel | M.Sc. | en_US |
| dcterms.LCSH | Thin film transistors -- Simulation methods | en_US |
| dcterms.LCSH | Thin film transistors -- Mathematical models | en_US |
| dcterms.LCSH | Hong Kong Polytechnic University -- Dissertations | en_US |
| dcterms.accessRights | restricted access | en_US |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| b14418848.pdf | For All Users (off-campus access for PolyU Staff & Students only) | 2.48 MB | Adobe PDF | View/Open |
Copyright Undertaking
As a bona fide Library user, I declare that:
- I will abide by the rules and legal ordinances governing copyright regarding the use of the Database.
- I will use the Database for the purpose of my research or private study only and not for circulation or further reproduction or any other purpose.
- I agree to indemnify and hold the University harmless from and against any loss, damage, cost, liability or expenses arising from copyright infringement or unauthorized usage.
By downloading any item(s) listed above, you acknowledge that you have read and understood the copyright undertaking as stated above, and agree to be bound by all of its terms.
Please use this identifier to cite or link to this item:
https://theses.lib.polyu.edu.hk/handle/200/98